Abstract
This paper describes memristors' emerging prevalence and potential replacement for current CMOS technology. It delves into memristor properties, specifically how current flows through it, fabrication methodology, and I-V curves.
Document Type
Article
Class Name
Electrical and Systems Engineering Undergraduate Research
Date of Submission
12-4-2023
Recommended Citation
Yin, William, "Experimental Fabrication of Al2O3 Based Memristors as Potential CMOS Alternative" (2023). Electrical and Systems Engineering Undergraduate and Graduate Research. 14.
https://openscholarship.wustl.edu/eseundergraduate_research/14
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