Abstract
This independent study is a continuation of the FL25 project focusing on solution-based indium gallium zinc oxide (IGZO). The solution-based method of IGZO provides a low-cost, high performance semiconductor which can be used in oxide thin film transistors. It was found that an 1:1:1, 2:1:1, and 5:1:1 ratio of In:Ga:Zn in a 0.5M concentration of 2-methoxyethanol with a 10 minute 70◦C prebake and 30 minute anneal at 300◦C produced high quality IGZO film. Backgate thin film transistors using IGZO was then fabricated to measure the electrical properties of the semiconductor. Using a probe station, it was found in electrical measurements of the IGZO thin film transistors that the quality of the IGZO layer was poor due to weak current levels and behavior not associated with n-type semiconductors. The poor IGZO quality may have been due to a low annealing temperature leading to an incomplete decomposition of the IGZO precursors.
Document Type
Final Report
Class Name
Mechanical Engineering and Material Sciences Independent Study
Language
English (en)
Date of Submission
5-19-2026
Recommended Citation
Choh, Jeremy, "Backgate Thin Film Transistor with Solution-Based Indium Gallium Zinc Oxide (IGZO)" (2026). Mechanical Engineering and Materials Science Independent Study. 333.
https://openscholarship.wustl.edu/mems500/333