Abstract
Oxide thin film transistors (TFTs) have gained popularity as a replacement silicon based TFTs, with indium gallium zinc oxide (IGZO) being the leading candidate. A solution-based fabrication method has been studied to replace the current fabrication method using radio frequency or direct current sputtering. However, the solution based fabrication method has shown to have low reliability in producing high quality IGZO films. Thus, the fabrication parameters to produce high quality IGZO films were studied. It was found that an IGZO solution with a 0.5M concentration of 2-methoxyethanol annealed at 300°C for 30 minutes with a prebake at 70°C for 10 minutes produced the best quality IGZO film.
Document Type
Final Report
Class Name
Mechanical Engineering and Material Sciences Independent Study
Language
English (en)
Date of Submission
12-19-2025
Recommended Citation
Choh, Jeremy, "Fabrication Process for Thin Film Solution Based Indium Galium Zinc Oxide (IGZO)" (2025). Mechanical Engineering and Materials Science Independent Study. 310.
https://openscholarship.wustl.edu/mems500/310