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Abstract
This report presents results from contact engineering with Schottky and ohmic contacts between molybdenum disulfide (MoS2) and various metal electrode materials. It also discusses the probability to fabricate the novel back-gate multilayer capacitor field-effect transistor (MBCFET) based on MoS2. Using a probe station and semiconductor analyzer, different electrode materials were tested and analyzed to understand their impact on device performance.
Document Type
Final Report
Class Name
Mechanical Engineering and Material Sciences Independent Study
Date of Submission
5-14-2024
Recommended Citation
Xu, Shijue, "Contact Engineering and Back Gate MBCFET Devices Based on MoS2" (2024). Mechanical Engineering and Materials Science Independent Study. 259.
https://openscholarship.wustl.edu/mems500/259