Abstract
This study investigates the performance of Ag/Al2O3/Au memristors, focusing on devices with dimensions ranging from 400nm to 1um. It was observed that smaller devices (400nm and 600nm) consistently display Ohmic behavior, lacking a high-resistance state. This is attributed to increased current density and potential structural imperfections during fabrication. In contrast, larger devices (800nm and 1um) exhibit volatile threshold switching (VTS) and a notable delay in transitioning from high to low resistance states. The study suggests that this delay is due to the instability of conductive filaments in smaller volumes. Additionally, these larger memristors show short retention of memristive qualities, with consecutive testing leading to breakdown, likely due to Joule heating effects enhancing ionic drift and diffusion. This study underscores the critical influence of device size on metal conductive filament memristor performance, highlighting the challenges in device miniaturization.
Document Type
Final Report
Class Name
Mechanical Engineering and Material Sciences Independent Study
Date of Submission
12-21-2023
Recommended Citation
Huang, Catherine, "Size-Dependent Behavior and Challenges in Ag/Al2O3/Au Memristors: An Investigation into Miniaturization Effect" (2023). Mechanical Engineering and Materials Science Independent Study. 244.
https://openscholarship.wustl.edu/mems500/244