Abstract

Halide perovskite has been extensively studied for its excellent optoelectronic properties. In this project, we want to explore some range of band gap that conventional 2D materials could not have. To overcome this challenge, we aimed to produce two-dimensional (2D) perovskites with large scale which is suitable for device fabrication and improve its stability using strain engineering. To prepare such 2D perovskite, we tried 2D transformation first and then decided to use confined growth to optimize result. For strain engineering, we employed sputtered nickel as an external stressor.

So far, we have produced multilayer polycrystalline perovskites material close to atomic single layer. For the strain engineering part, we have reassured that tensile-stressed perovskite deteriorates the perovskite quality faster than the zero-stressed one. XRD has been measured followed by the calculation of strain value. More experiments will be carried out to advance this research to produce high-quality single crystal perovskite, to find the optimal sputtering condition of compressive stress towards the ultimate optimized device.

Committee Chair

Professor Sang-Hoon Bae, Mechanical Engineering & Masterial Science

Committee Members

Professor Rohan Mishra, Professor Xianglin Li

Degree

Master of Science (MS)

Author's Department

Mechanical Engineering & Materials Science

Author's School

McKelvey School of Engineering

Document Type

Thesis

Date of Award

Spring 5-15-2023

Language

English (en)

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