Abstract

The huge amount of data calculation requires the next generation non-volatile memory (NVM) technology to have the characteristics of large storage capacity and fast read/write speed. The storage and computing are separated in the traditional von Neumann architecture-based hardware platforms. The data transport between information processing and storage are causing increasing time latency, which is called von Neumann Bottleneck. Memristor, as a basic circuit component, could combine perception, storage, and computing in a single component, which has a very wide range of application prospectives. In this paper, we investigate binary oxide memristor and 2D material memristor, including their structural design and fabrication methods, and study their memristive mechanisms. We first introduce several memristive materials and some methods for the fabrication of the action layers. Then we introduced the memristor we made with an active layer of Al2O3, including the fabrication of electrodes and active layer. We also analyzed the characteristics of this memristor and introduced two kinds of memristors with the active layer of WSe2/ h-BN and MoS2, separately. We optimized the methods for obtaining and transferring 2D active layer materials of memristors, describing the fabrication process of the electrodes and analyzing the memristive method of these materials. Finally, we made a conclusion and looked at the future works of memristors.

Committee Chair

Sang-Hoon Bae

Committee Members

Rohan Mishra Chuan Wang

Degree

Master of Science (MS)

Author's Department

Mechanical Engineering & Materials Science

Author's School

McKelvey School of Engineering

Document Type

Thesis

Date of Award

Spring 5-15-2023

Language

English (en)

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Available for download on Wednesday, April 22, 2026

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