Abstract
Continued scaling of conventional silicon metal–oxide–semiconductor field-effect transistors (MOSFETs) is increasingly constrained by short-channel effects and reduced electrostatic gate control. Atomically thin two-dimensional (2D) semiconductors provide a promising approach for nanoscale transistors because their ultrathin bodies enable strong electrostatic control while their van der Waals surfaces facilitate integration with dissimilar materials. However, the performance of 2D field-effect transistors (FETs) remains strongly dependent on the gate dielectric and electrical contacts. This thesis investigates dielectric and contact engineering in n-type MoS₂ and p-type WSe₂ FETs.
Committee Chair
Chuan Wang
Committee Members
Sanghoon Bae Shantanu Chakrabartty
Degree
Master of Engineering (ME)
Author's Department
Electrical & Systems Engineering
Document Type
Thesis
Date of Award
Summer 8-13-2026
Language
English (en)
Recommended Citation
Jiang, Chen, "Integration of Freestanding High-κ Dielectrics with Two-Dimensional Materials" (2026). McKelvey School of Engineering Graduate Student Theses & Dissertations. 1398.
https://openscholarship.wustl.edu/eng_etds/1398