Abstract

Two-dimensional (2D) materials have attracted extensive attention in the field of nanoelectronics due to their atomic-scale thickness, high surface-to-volume ratio, tunable electronic properties, and compatibility with low-temperature processing. These characteristics make them highly suitable for the construction of emerging device architectures, particularly in both ionic and electronic devices.

In this work, we investigate the application of 2D materials in two distinct classes of devices: ionically-driven memristors and electronically-dominated metal–semiconductor contacts. For the memristor study, we fabricate heterostructure-based resistive switching devices using h-BN and WSe2 as active layers. These 2D material-based memristors exhibit stable power consumption loops and high linearity under pulse modulation, demonstrating their potential as synaptic elements for neuromorphic computing and energy-efficient memory systems.

In parallel, we explore the role of 2D materials in contact engineering by analyzing the interface between MoS2 and various metal electrodes. Systematic experiments reveal that the selection of contact metals and tuning of work function critically influence the Schottky barrier height and carrier injection efficiency, offering valuable insights into the optimization of 2D semiconductor-based transistors.

Collectively, this study demonstrates the versatility and promise of 2D materials for both ionic and electronic device applications, highlighting their potential for integration into next-generation computing architectures.

Committee Chair

Sanghoon Bae

Committee Members

Chuan Wang, Katharine Flores

Degree

Master of Science (MS)

Author's Department

Materials Science & Engineering

Author's School

McKelvey School of Engineering

Document Type

Thesis

Date of Award

Fall 5-7-2025

Language

English (en)

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