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Washington University Undergraduate Research Digest: WUURD 5(2)
Peer Editors: Ashley Brosius and Akhila Narla; Faculty Mentor: Sophia Hayes While a detailed understanding of the nature of OPNMR in GaAs has been shown in the successful modeling of the OPNMR signal in GaAs, no equivalent work has to date been done for InP. This project attempts to create such a model for InP, a semiconductor with unique electronic properties that is used in high-end electronics applications. Understanding the OPNMR signal of InP would perfect current uses and perhaps lead to new applications. To create such a model, the working GaAs model was altered and all the inputs were redone so as to represent InP. The new InP model was successful in preliminary modeling of the OPNMR signal, though initial attempts at modeling magnetoabsorptive phenomena were unsuccessful.
From the Washington University Undergraduate Research Digest: WUURD, Volume 5, Issue 2, Spring 2010. Published by the Office of Undergraduate Research.
Henry Biggs, Director of Undergraduate Research and Associate Dean in the College of Arts & Sciences; Joy Zalis Kiefer, Undergraduate Research Coordinator, Co-editor, and Assistant Dean in the College of Arts & Sciences; Kristin Sobotka, Editor.
Hyrc, Michael, "Modeling of InP OPNMR Signals" (2010). Washington University Undergraduate Research Digest, Volume 5, Issue 2.